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| 2SK168 Silicon N-Channel Junction FET Application VHF Amplifier, Mixer, Local oscillator Outline TO-92 (2) 1. Gate 2. Source 3. Drain 3 2 1 2SK168 Absolute Maximum Ratings (Ta = 25C) Item Gate to drain voltage Gate to source voltage Gate current Drain current Channel power dissipation Channel temperature Storage temperature Symbol VGDO VGSS IG ID Pch Tch Tstg Ratings -30 -1 10 20 200 150 -55 to +150 Unit V V mA mA mW C C Electrical Characteristics (Ta = 25C) Item Gate to drain breakdown voltage Gate cutoff current Drain current Gate to source cutoff voltage Forward transfer admittance Input capacitance Reverse transfer capacitance Power gain Noise figure Note: D 4 to 8 Symbol V(BR)GDO I GSS I DSS* 1 Min -30 -- 4 -- 8 -- -- -- -- Typ -- -- -- -- 10 6.8 0.1 27 1.7 Max -- -10 20 -3.0 -- -- -- -- -- Unit V nA mA V mS pF pF dB dB Test conditions I G = -100 A, IS = 0 VGS = -0.5 V, VDS = 0 VDS = 5 V, VGS = 0 VDS = 5 V, ID = 10 A VDS = 5 V, VGS = 0, f = 1 kHz VDS = 5 V, VGS = 0, f = 1 MHz VDS = 5 V, VGS = 0, f = 1 MHz VDS = 5 V, VGS = 0, f = 100 MHz VDS = 5 V, VGS = 0, f = 100 MHz VGS(off) |yfs| Ciss Crss PG NF 1. The 2SK168 is grouped by I DSS as follows. E 6 to 12 F 10 to 20 2 2SK168 Maximum Channel Power Dissipation Curve Channel Power Dissipation Pch (mW) 300 Typical Output Characteristics (1) 10 VGS = 0 Drain Current ID (mA) 8 -0.2 V 6 -0.4 4 -0.6 2 -0.8 -1.0 0 30 40 10 20 Drain to Source Voltage VDS (V) 50 Pc h = 200 20 0 m W 100 0 100 150 50 Ambient Temperature Ta (C) Typical Output Characteristics (2) 10 VGS = 0 Drain Current ID (mA) Drain Current ID (mA) 8 -0.2 V 6 -0.4 4 -0.6 2 -0.8 -1.0 3 4 1 2 Drain to Source Voltage VDS (V) 5 15 Typical Transfer Characteristics VDS = 5 V 10 F 5 E D 0 -3.0 0 -2.0 -1.0 Gate to Source Voltage VGS (V) 0 3 2SK168 Forward Transfer Admittance vs. Drain to Source Voltage Forward Transfer Admittance yfs (mS) 15 Forward Transfer Admittance yfs (mS) Ta = -25C 25C 10 75C 50 20 10 5 2 1.0 0.5 0.2 VDS = 5 V f = 1 kHz Forward Transfer Admittance vs. Drain Current 5 VGS = 0 f = 1 kHz 0 10 5 Drain to Source Voltage VDS (V) 15 5 10 0.5 1.0 2 Drain Current ID (mA) 20 20 Input Capacitance Ciss (pF) VGS = 0 f = 1 MHz 10 Reverse Transfer Capacitance Crss (pF) Input Capacitance vs. Drain to Source Voltage Reverse Transfer Capacitance vs. Drain to Source Voltage 5 VGS = 0 f = 1 MHz 2 1.0 0.5 5 0.2 0.1 0.05 0.1 2 0.1 2 5 10 0.2 0.5 1.0 Drain to Source Voltage VDS (V) 2 5 0.2 0.5 1.0 Drain to Source Voltage VDS (V) 10 4 2SK168 Output Capacitance vs. Drain to Source Voltage 200 Output Capacitance Coss (pF) 100 50 VGS = 0 f = 1 MHz Power Gain PG (dB) 20 VGS = 0 f = 100 MHz 10 30 Power Gain vs. Drain to Source Voltage 20 10 5 2 0.1 0.2 0.5 1.0 2 5 Drain to Source Voltage VDS (V) 10 0 10 5 Drain to Source Voltage VDS (V) 15 Power Gain vs. Drain Current 30 E Power Gain PG (dB) D 20 F Noise Figure NF (dB) 6 8 Noise Figure vs. Drain to Source Voltage VGS = 0 f = 100 MHz 4 10 VDS = 5 V f = 100 MHz VGS Variable 2 0 2 4 6 8 10 12 14 Drain Current ID (mA) 16 0 4 8 12 Drain to Source Voltage VDS (V) 16 5 2SK168 Input and Output Admittance vs. Frequency yis = gis+jbis yos = gos+jbos VDS = 5 V ID = 10 mA gis bisx10 bosx10 gos Forward Transfer Admittance yfs (mS) Reverse Transfer Admittance yrs (mS) 5 Input Admittance yis (mS) Output Admittance yos (mS) 2 1.0 0.5 50 VDS = 5 V ID = 10 mA gfs 10 5 yfs = gfs+jbfs yrs = grs+jbfs -bfs -10 brs 10 grs Transfer Admittance vs. Frequency 20 0.2 0.1 0.05 50 2 1.0 0.5 50 100 200 Frequency f (MHz) 500 100 200 Frequency f (MHz) 500 Input and Output Admittance vs. Drain Current Forward Transfer Admittance yfs (mS) Reverse Transfer Admittance yrs (mS) 5 Input Admittance yis (mS) Output Admittance yos (mS) bos 2 1.0 0.5 VDS = 5 V f = 100 MHz yis = gis+jbis yos = gos+jbos gis bisx10 50 Transfer Admittance vs. Drain Current VDS = 5 V f = 100 MHz gfs 10 5 -bfs -100 brs 2 100 grs 1.0 0.5 0.5 yfs = gfs+jbfs yrs = grs+jbrs 1.0 2 5 10 20 Drain Current ID (mA) 50 20 0.2 0.1 0.05 0.5 gos is Negligible Small at This Frequency 1.0 2 5 10 20 Drain Current ID (mA) 50 6 2SK168 Power Gain and Noise Figure Test Circuit Shield 5.4 50 SG Output Impedance C1 S.G. L1 D.U.T. 3.0 L2 4,700 50 1,000 V.V C2 VDD Unit R : C : pF C1, C2 : 0 to 30 pF Variable Air L1 : 3.5 T 1 mm Copper Ribbon, Tin plated 10 mm Inside dia. L2 : 4.5 T 1 mm Copper Ribbon, Tin plated 10 mm Inside dia. 7 Unit: mm 4.8 0.3 3.8 0.3 2.3 Max 0.45 0.1 0.7 0.60 Max 12.7 Min 5.0 0.2 0.5 1.27 2.54 Hitachi Code JEDEC EIAJ Weight (reference value) TO-92 (2) Conforms Conforms 0.25 g Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party's rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi's sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi's sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 URL NorthAmerica : http:semiconductor.hitachi.com/ Europe : http://www.hitachi-eu.com/hel/ecg Asia (Singapore) : http://www.has.hitachi.com.sg/grp3/sicd/index.htm Asia (Taiwan) : http://www.hitachi.com.tw/E/Product/SICD_Frame.htm Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm Japan : http://www.hitachi.co.jp/Sicd/indx.htm For further information write to: Hitachi Semiconductor (America) Inc. 179 East Tasman Drive, San Jose,CA 95134 Tel: <1> (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe GmbH Electronic components Group Dornacher Strae 3 D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 778322 Hitachi Asia Pte. Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533 Hitachi Asia Ltd. Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105) Tel: <886> (2) 2718-3666 Fax: <886> (2) 2718-8180 Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Sha Tsui, Kowloon, Hong Kong Tel: <852> (2) 735 9218 Fax: <852> (2) 730 0281 Telex: 40815 HITEC HX Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan. |
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